High-rate Magnetron RF Sputtering of Tantalum
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چکیده
منابع مشابه
Understanding deposition rate loss in high power impulse magnetron sputtering
The lower deposition rate for high power impulse magnetron sputtering (HiPIMS) compared to direct current magnetron sputtering for the same average power is often reported as a drawback. The often invoked reason is back-attraction of ionized sputtered material to the target, due to a substantial negative potential profile from the location of ionization towards the cathode. Emitting and swept L...
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By using Radio Frequency (RF) magnetron sputtering method, Pb(Zr0.5Ti0.5)O3 (PZT) thin films were deposited on Pt/Ti/ SiO2/Si substrates. Pt/Ti bottom electrode was fabricated on SiO2/Si substrates by magnetron dual-facing-target sputtering system. Phase and crystalline structure analyses of the PZT films were performed on an X-ray diffraction(XRD), Surface morphology, roughness and particle si...
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J. T. Gudmundsson, N. Brenning, Daniel Lundin and Ulf Helmersson, High power impulse magnetron sputtering discharge, 2012, Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, (30), 030801. http://dx.doi.org/10.1116/1.3691832 Copyright: American Vacuum Society, This article may be downloaded for personal use only. Any other use requires prior permission of the author and the ...
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Ferroelectric thin films are currently being used to develop tunable microwave circuits based on the electric-field dependence of the dielectric constant. (Ba0.5Sr0.5)TiO3 ~BST! films prepared by sputtering on Pt/TiO2 /SiO2 /Si substrates are found to exhibit a capacitance change ~tunability! of nearly 4:1. Higher tunability has been attributed to the ~100! texturing of the BST films and is a r...
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ژورنال
عنوان ژورنال: SHINKU
سال: 1981
ISSN: 0559-8516,1880-9413
DOI: 10.3131/jvsj.24.240